? semiconductor components industries, llc, 2009 august, 2009 ? rev. 11 publication order number: bc856alt1/d 1 bc856alt1g series general purpose transistors pnp silicon features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit collector-emitter voltage bc856 bc857 bc858, bc859 v ceo ? 65 ? 45 ? 30 v collector-base voltage bc856 bc857 bc858, bc859 v cbo ? 80 ? 50 ? 30 v emitter ? base voltage v ebo ? 5.0 v collector current ? continuous i c ? 100 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board, (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. sot ? 23 (to ? 236ab) case 318 style 6 1 2 3 collector 3 1 base 2 emitter http://onsemi.com see detailed ordering and shipping information in the package dimensions sect ion on page 6 of this data sheet. ordering information marking diagram xx m xx = device code xx = (refer to page 6) m = date code* =pb ? free package (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. 1
bc856alt1g series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ? emitter breakdown voltage bc856 series (i c = ? 10 ma) bc857 series bc858, bc859 series v (br)ceo ? 65 ? 45 ? 30 ? ? ? ? ? ? v collector ? emitter breakdown voltage bc856 series (i c = ? 10 a, v eb = 0) bc857a, bc857b only bc858, bc859 series v (br)ces ? 80 ? 50 ? 30 ? ? ? ? ? ? v collector ? base breakdown voltage bc856 series (i c = ? 10 a) bc857 series bc858, bc859 series v (br)cbo ? 80 ? 50 ? 30 ? ? ? ? ? ? v emitter ? base breakdown voltage bc856 series (i e = ? 1.0 a) bc857 series bc858, bc859 series v (br)ebo ? 5.0 ? 5.0 ? 5.0 ? ? ? ? ? ? v collector cutoff current (v cb = ? 30 v) collector cutoff current (v cb = ? 30 v, t a = 150 c) i cbo ? ? ? ? ? 15 ? 4.0 na a on characteristics dc current gain bc856a, bc857a, bc858a (i c = ? 10 a, v ce = ? 5.0 v) bc856b, bc857b, bc858b bc857c, bc858c (i c = ? 2.0 ma, v ce = ? 5.0 v) bc856a, bc857a, bc858a bc856b, bc857b, bc858b, bc859b bc857c, bc858c, bc859c h fe ? ? ? 125 220 420 90 150 270 180 290 520 ? ? ? 250 475 800 ? collector ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v ce(sat) ? ? ? ? ? 0.3 ? 0.65 v base ? emitter saturation voltage (i c = ? 10 ma, i b = ? 0.5 ma) (i c = ? 100 ma, i b = ? 5.0 ma) v be(sat) ? ? ? 0.7 ? 0.9 ? ? v base ? emitter on voltage (i c = ? 2.0 ma, v ce = ? 5.0 v) (i c = ? 10 ma, v ce = ? 5.0 v) v be(on) ? 0.6 ? ? ? ? 0.75 ? 0.82 v small ? signal characteristics current ? gain ? bandwidth product (i c = ? 10 ma, v ce = ? 5.0 vdc, f = 100 mhz) f t 100 ? ? mhz output capacitance (v cb = ? 10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure (i c = ? 0.2 ma, v ce = ? 5.0 vdc, r s = 2.0 k , f = 1.0 khz, bw = 200 hz) bc856, bc857, bc858 series bc859 series nf ? ? ? ? 10 4.0 db
bc856alt1g series http://onsemi.com 3 bc857/bc858/bc859 figure 1. normalized dc current gain i c , collector current (madc) 2.0 figure 2. ?saturation? and ?on? voltages i c , collector current (madc) -0.2 0.2 figure 3. collector saturation region i b , base current (ma) figure 4. base ? emitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 5. capacitances v r , reverse voltage (volts) 10 figure 6. current ? gain ? bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0
bc856alt1g series http://onsemi.com 4 bc856 figure 7. dc current gain i c , collector current (ma) figure 8. ?on? voltage i c , collector current (ma) -0.8 -1.0 -0.6 -0.2 -0.4 1.0 2.0 -0.1 -1.0 -10 -200 -0.2 0.2 0.5 -0.2 -1.0 -10 -200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = -5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. base ? emitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = -5.0 v t a = 25 c 0 -0.5 -2.0 -5.0 -20 -50 -100 -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c vb for v be -2.0 -5.0 -20 -50 -100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. current ? gain ? bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0 -50 ma -200 ma
bc856alt1g series http://onsemi.com 5 figure 13. thermal response t, time (ms) 1.0 r(t), transient thermal 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 14. active region safe operating area v ce , collector-emitter voltage (v) -200 -1.0 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse bonding wire limit thermal limit second breakdown limit 3 ms t j = 25 c z jc (t) = r(t) r jc r jc = 83.3 c/w max z ja (t) = r(t) r ja r ja = 200 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 -100 -50 -10 -5.0 -2.0 -5.0 -10 -30 -45 -65 -100 1 s bc558, bc559 bc557 bc556 the safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150 c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 13. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
bc856alt1g series http://onsemi.com 6 ordering information device marking package shipping ? bc856alt1g 3a sot ? 23 (pb ? free) 3,000 / tape & reel bc856alt3g sot ? 23 (pb ? free) 10,000 / tape & reel bc856blt1g 3b sot ? 23 (pb ? free) 3,000 / tape & reel bc856blt3g sot ? 23 (pb ? free) 10,000 / tape & reel bc857alt1g 3e sot ? 23 (pb ? free) 3,000 / tape & reel bc857blt1g 3f sot ? 23 (pb ? free) bc857blt3g sot ? 23 (pb ? free) 10,000 / tape & reel bc857clt1g 3g sot ? 23 (pb ? free) 3,000 / tape & reel BC857CLT3G sot ? 23 (pb ? free) 10,000 / tape & reel bc858alt1g 3j sot ? 23 (pb ? free) 3,000 / tape & reel bc858blt1g 3k sot ? 23 (pb ? free) bc858blt3g 3l sot ? 23 (pb ? free) 10,000 / tape & reel bc858clt1g sot ? 23 (pb ? free) 3,000 / tape & reel bc858clt3g sot ? 23 (pb ? free) 10,000 / tape & reel bc859blt1g 4b sot ? 23 (pb ? free) 3,000 / tape & reel bc859blt3g sot ? 23 (pb ? free) 10,000 / tape & reel bc859clt1g 4c sot ? 23 (pb ? free) 3,000 / tape & reel bc859clt3g sot ? 23 (pb ? free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
bc856alt1g series http://onsemi.com 7 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue an *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 style 6: pin 1. base 2. emitter 3. collector d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318 ? 01 thru ? 07 and ? 09 obsolete, new standard 318 ? 08. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. bc856alt1/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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